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About this Engineering article
MBE growth of novel GaAsn-AlGaAs field-effect transistor structures with embedded InAs quantum traps and their transport characteristics by G. Yusa; H. Sakaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- G. Yusa; H. Sakaki
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1997
- Language
- EN
- Field
- Engineering (Physical Sciences)