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Fabrication of beam resonators from hot-wall chemical vapour deposited SiC by Enrico Mastropaolo; Rebecca Cheung; Anne Henry; Erik Janzén is a Engineering article available to read on EtoBox.

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Single crystal and polycrystalline 3C-SiC have been grown in a hot-wall chemical vapour deposition reactor on 100 mm diameter p-type boron-doped (1 0 0) Si wafer. The crystal structure of the films has been determined by X-ray diffraction. Moreover, cantilever resonators have been fabricated from the two grown 3C-SiC films using a one-step dry etch and release process. The designed beam length has been varied between 50 and 200 lm. Resonant frequencies in the range between 110 kHz-1.5 MHz and 50-750 kHz have been obtained for single crystal and polycrystalline SiC devices, respectively. Furthermore, the experimental resonance frequencies have been used to calculate Young's Modulus E for both types of SiC. The single crystal SiC has shown a relatively high Young's Modulus (446 GPa) and should be an optimal material for RF-MEMS applications.

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Author

Enrico Mastropaolo; Rebecca Cheung; Anne Henry; Erik Janzén

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)