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About this Engineering article
Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sources by G.J. Davies; P.J. Skevington; J.C. Morris; A.C. Jones; S. Rushworth; J.S. Foord; C.L. Levoguer is a Engineering article available to read on EtoBox.
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- Author
- G.J. Davies; P.J. Skevington; J.C. Morris; A.C. Jones; S. Rushworth; J.S. Foord; C.L. Levoguer
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1994
- Language
- EN
- Field
- Engineering (Physical Sciences)