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This study analyzes the performance of SnO₂/SiO₂/Si Metal-Insulator-Semiconductor (MIS) solar cells, focusing on the effects of interface state density and SiO₂ layer thickness on open-circuit voltage (VOC) and conversion efficiency (η). The findings indicate that increasing interface state density negatively impacts VOC and η, while an optimal SiO₂ thickness of approximately 19.8Å yields a maximum efficiency of 16.15%. The results emphasize the significance of controlling interfacial properties for enhanci

Author

Krimo de Saida

Language

EN