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About this Materials Science article
Improved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoO x layer at source/drain region by Zhang, Yuan; Qu, Xin-Ping is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Zhang, Yuan; Qu, Xin-Ping
- Publisher
- American Institute of Physics; American Institute of Physics Inc.; Melville NY: American Institute of Physics; AIP Publishing (ISSN 2158-3226)
- Published
- 2019
- Field
- Materials Science (Physical Sciences)