About this Engineering article
Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation by Fujisaki, Yoshihisa; Matsuzaki, Nozomu; Kurotsuchi, Kenzo; Morikawa, T; Kinoshita, M; Kitai, N; Hanzawa, Satoru; Moriya, H; Takaura, Norikatsu; Terao, M; Matsuoka, M; Koga, Tsuyoshi; Moniwa, M is a Engineering article available to read on EtoBox.
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- Author
- Fujisaki, Yoshihisa; Matsuzaki, Nozomu; Kurotsuchi, Kenzo; Morikawa, T; Kinoshita, M; Kitai, N; Hanzawa, Satoru; Moriya, H; Takaura, Norikatsu; Terao, M; Matsuoka, M; Koga, Tsuyoshi; Moniwa, M
- Publisher
- Cambridge University Press; Cambridge University Press (Materials Research Society); Cambridge University Press (CUP) (ISSN 0272-9172)
- Published
- 2007
- Field
- Engineering (Physical Sciences)