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About this Engineering article
Highly selective dry etching of GaP in the presence of AlxGa1−xP with a SiCl4/SF6 plasma by Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0022-3727)
- Published
- 2018
- Language
- EN
- Field
- Engineering (Physical Sciences)
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