Skip to content

Opening book details…

About this scholarly article

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications - GaN HEMT reliability at 125 °C for 1000 hours by Moses, Justin D.; Jenkins, Luke L.; Aggas, Jeff; Abell, Will; Henning, Stephan; Tennant, John; Wilson, Christopher G.; Dean, Robert N. is a scholarly article available to read on EtoBox.

Author
Moses, Justin D.; Jenkins, Luke L.; Aggas, Jeff; Abell, Will; Henning, Stephan; Tennant, John; Wilson, Christopher G.; Dean, Robert N.
Publisher
IEEE
Published
2013
Language
EN

More by Moses, Justin D.; Jenkins, Luke L.; Aggas, Jeff; Abell, Will; Henning, Stephan; Tennant, John; Wilson, Christopher G.; Dean, Robert N.

Browse all works by Moses, Justin D.; Jenkins, Luke L.; Aggas, Jeff; Abell, Will; Henning, Stephan; Tennant, John; Wilson, Christopher G.; Dean, Robert N.