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Advantages of N-Well CMOS Process by AdiseshuMidde is a document available to read on EtoBox.

The n-well CMOS process has advantages over p-well due to lower substrate bias effects on threshold voltage and lower parasitic capacitances associated with source and drain regions. Latch-up problems can also be reduced by using a low resistivity epitaxial p-type substrate, though the n-well process degrades the performance of p-type transistors that do not perform as well.

Author
AdiseshuMidde
Language
EN