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Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter‐wave oscillations by P. D. Yoder; Sriraaman Sridharan; Samuel Graham; S.‐C. Shen; J.‐H. Ryou; R. D. Dupuis is a Engineering article available to read on EtoBox.

What is Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter‐wave oscillations about?

## Abstract A new paradigm is presented for the direct generation of self‐sustaining millimeter‐wave oscillations, based on the piezo‐ and ferroelectric properties of wurtzite III‐nitride materials. In contrast to Gunn diodes which exploit a bulk‐like active region, periodic oscillation is achieved in the proposed structures through the creation, propagation and collection of traveling dipole domains supported by fixed polarization charge and the associated two‐dimensional electron gas along the plane of a polar heterojunction. State‐of‐the‐art numerical simulation based on the synchronous full‐band ensemble Monte Carlo method is applied to study induced oscillations in a simple triode structure commonly used for AlGaN/GaN high electron mobility transistors. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author
P. D. Yoder; Sriraaman Sridharan; Samuel Graham; S.‐C. Shen; J.‐H. Ryou; R. D. Dupuis
Publisher
John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
Published
2011
Language
EN
Field
Engineering (Physical Sciences)

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