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About this Engineering article
Hole transport in SiO/sub 2/ and reoxidized nitrided SiO/sub 2/ gate insulators at low temperature (FETs) by Boesch, H.E.; Dunn, G.J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Boesch, H.E.; Dunn, G.J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 1991
- Language
- EN
- Field
- Engineering (Physical Sciences)