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Characteristics of interface between Ta2O5 thin film and Si (100) substrate by A.P. Huang; Paul K. Chu is a Engineering article available to read on EtoBox.

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Control of the interface between Ta 2 O 5 gate dielectric and Si substrate is considered to be one of the most challenging issues for good device performance. In this work, tantalum pentoxide (Ta 2 O 5 ) thin films were fabricated using a magnetron sputtering system and the influence of the substrate bias and deposition temperature on the interfacial characteristics of Ta 2 O 5 thin films on Si was investigated by systematically deconvoluting the RBS data and C -V curves. Our results show that the thickness of the interfacial layer remains about the same at different substrate biases and as the deposition temperature increases, the interfacial layer between Ta 2 O 5 and Si (100) thickens slightly. These suggest that substrate bias assistance is an effective method to improve the structural and dielectric properties of Ta 2 O 5 /Si thin films. The effects and mechanism of substrate biasing on the interfacial layer are also described.

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Author

A.P. Huang; Paul K. Chu

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0257-8972)

Published

2005

Language

EN

Field

Engineering (Physical Sciences)