About this scholarly article

2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Self-aligned top-gate amorphous oxide thin-film transistors with IZO/IGZO stacked active layer and Al reacted source/drain region by Chang, Baozhu; Deng, Xuan; Tao, Jinao; Yang, Huan; Zhang, Shengdong is a scholarly article available to read on EtoBox.

Author

Chang, Baozhu; Deng, Xuan; Tao, Jinao; Yang, Huan; Zhang, Shengdong

Publisher

IEEE

Published

2019

Language

EN