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About this Engineering article
Investigation of Field Concentration Effects in Arch Gate Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory by J. H. Lee; G. S. Lee; S. Cho; J. Yun; B. Park is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- J. H. Lee; G. S. Lee; S. Cho; J. Yun; B. Park
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2010
- Field
- Engineering (Physical Sciences)
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