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About this scholarly article
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Detailed high-k/In0.53Ga0.47As interface understanding to enable improved In0.53Ga0.47As gate stack quality by Huang, J.; Goel, N.; Lysaght, P.; Veksler, D.; Nagaiah, P.; Oktyabrsky, S.; Price, J.; Zhao, H.; Chen, Y. T.; Lee, J. C.; Woicik, J. C.; Majhi, P.; Kirsch, P. D.; Jammy, R. is a scholarly article available to read on EtoBox.
- Author
- Huang, J.; Goel, N.; Lysaght, P.; Veksler, D.; Nagaiah, P.; Oktyabrsky, S.; Price, J.; Zhao, H.; Chen, Y. T.; Lee, J. C.; Woicik, J. C.; Majhi, P.; Kirsch, P. D.; Jammy, R.
- Publisher
- IEEE
- Published
- 2011
- Language
- EN