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About this Engineering article
Corrigendum to “Growth mechanisms in semipolar (202 ̄1) and nonpolar m plane (101 ̄0) AlGaN/GaN structures grown by PAMBE under N-rich conditions” [Cryst. Growth 377C (2013) 184–191] by Sawicka, M.; Chèze, C.; Turski, H.; Smalc-Koziorowska, J.; Kryśko, M.; Kret, S.; Remmele, T.; Albrecht, M.; Cywiński, G.; Grzegory, I.; Skierbiszewski, C. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Sawicka, M.; Chèze, C.; Turski, H.; Smalc-Koziorowska, J.; Kryśko, M.; Kret, S.; Remmele, T.; Albrecht, M.; Cywiński, G.; Grzegory, I.; Skierbiszewski, C.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2015
- Language
- EN
- Field
- Engineering (Physical Sciences)