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About this Materials Science article
Theoretical study of charge trapping levels in silicon nitride using the LDA-1/2 self-energy correction scheme for excited states by Weslley S. Patrocinio; Mauro Ribeiro Jr.; Leonardo R.C. Fonseca is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Weslley S. Patrocinio; Mauro Ribeiro Jr.; Leonardo R.C. Fonseca
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
- Published
- 2012
- Language
- EN
- Field
- Materials Science (Physical Sciences)
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