Skip to content

Opening book details…

About this Engineering article

Fabrication of High-Quality GOI and SGOI Structures by Rapid Melt Growth Method - Novel Platform for High-Mobility Transistors and Photonic Devices - by Heiji Watanabe; Yuichiro Suzuki; Shimpei Ogiwara; Nobuaki Kataoka; Tatsuya Hashimoto; Takuji Hosoi; Takayoshi Shimura is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Heiji Watanabe; Yuichiro Suzuki; Shimpei Ogiwara; Nobuaki Kataoka; Tatsuya Hashimoto; Takuji Hosoi; Takayoshi Shimura
Publisher
The Electrochemical Society (ISSN 2151-2043)
Published
2012
Language
EN
Field
Engineering (Physical Sciences)

More by Heiji Watanabe; Yuichiro Suzuki; Shimpei Ogiwara; Nobuaki Kataoka; Tatsuya Hashimoto; Takuji Hosoi; Takayoshi Shimura

Browse all works by Heiji Watanabe; Yuichiro Suzuki; Shimpei Ogiwara; Nobuaki Kataoka; Tatsuya Hashimoto; Takuji Hosoi; Takayoshi Shimura