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Electrical Transport Properties in ZnO Bulk, c/ZnO and ZnMgO/ZnO/ZnMgO Heterostructures by Amirabbasi, M.; Sarsari, I. Abdolhosseini is a scholarly article available to read on EtoBox.

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In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most important scattering parameters for controlling electron concentration and electron mobility were obtained. Treatment of intrinsic mechanisms included polar-optical phonon scattering, piezoelectric scattering and acoustic deformation potential scattering. For extrinsic mechanisms, ionized impurity, dislocation scattering, and strain-induced fields were included. For bulk ZnO, the reported experimental data were corrected for removing the effects of a degenerate layer at the ZnO/sapphire interface via a two layer Hall effect model. Also, donor density, acceptor density and donor activation energy were determined via the charge balance equation. This sample exhibited hopping conduction below 50K and dislocation scattering closely controlled electron mobility closely. The obtained results indicated that the enhancement of electron mobility in double sample, compared with the single one, can be attributed to the reduction of dislocation density, two d

Author

Amirabbasi, M.; Sarsari, I. Abdolhosseini

Published

2016

Language

EN