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This document summarizes the specifications of the LK701 silicon VDMOS and LDMOS transistor designed for broadband RF applications up to 70 watts. Key specifications include a power gain of 14dB at 500MHz, 55% maximum drain efficiency, and input and output capacitances of 60pF and 30pF respectively. Performance curves show the transistor providing up to 70 watts of output power with 1dB compression while maintaining high efficiency. Electrical characteristics include a breakdown voltage of 65V and forward t

Author

Oscar Huerta

Language

EN