About this scholarly article

2013 IEEE International Electron Devices Meeting - Simulation based transistor-SRAM co-design in the presence of statistical variability and reliability by Asenov, A.; Cheng, B.; Wang, X.; Brown, A. R.; Reid, D.; Millar, C.; Alexander, C. is a scholarly article available to read on EtoBox.

Author

Asenov, A.; Cheng, B.; Wang, X.; Brown, A. R.; Reid, D.; Millar, C.; Alexander, C.

Publisher

IEEE

Published

2013