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The document discusses requirements for thin film deposition in CMOS processing and methods for depositing dielectrics and metal gate stacks using chemical vapor deposition (CVD) and atomic layer deposition (ALD). It describes the need for uniform thickness, conformal coverage, and a desired composition/properties in deposited films. CVD is outlined as a common method using gas reactants and thermal energy to deposit films. Requirements for the CVD process like transport and reaction phenomena are reviewed.

Author

yuy ca

Language

EN