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About this Engineering article
Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process by H. Hasegawa; T. Sato; C. Kaneshiro is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- H. Hasegawa; T. Sato; C. Kaneshiro
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-211X)
- Published
- 1999
- Field
- Engineering (Physical Sciences)