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About this Engineering article
20 - nm -gate-length erbium-/platinum-silicided n-∕p-type Schottky barrier metal-oxide-semiconductor field-effect transistors by M. Jang; C. Choi; S. Lee is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- M. Jang; C. Choi; S. Lee
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2008
- Field
- Engineering (Physical Sciences)