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Conduction band filling in In-rich InGaN and InN under hydrostatic pressure by G. Franssen; A. Kamińska; T. Suski; I. Gorczyca; N. E. Christensen; A. Svane; H. Lu; W. J. Schaff; E. Dimakis; A. Georgakilas; S.B. Che; Y. Ishitani; A. Yoshikawa is a Engineering article available to read on EtoBox.

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## Abstract We demonstrate the effect of conduction band shape evolution of InGaN with increasing In content and applying hydrostatic pressure. The influence of conduction band filling on the hydrostatic pressure dependence of photoluminescence in In~0.7~Ga~0.3~N and InN is investigated. It is found that the PL pressure coefficient __dE~PL~/dp__ of InN changes from ∼27 meV/GPa to ∼21 meV/GPa when the electron concentration increases from 3.6×10^17^ cm^–3^ to 1.1×10^19^ cm^–3^. In contrast, no significant change of __dE~PL~/dp__ with electron concentration was observed for In~0.7~Ga~0.3~N. We conclude that the pressure sensitivity of the Fermi level, which is responsible for the lowering of __dE~PL~/dp__ with respect to __dE~G~/dp__ in InN, is much less prominent in In~0.7~Ga~0.3~N than in InN. We attribute this difference to the larger band gap of In~0.7~Ga~0.3~N, which lowers the pressure sensitivity of m\*. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

G. Franssen; A. Kamińska; T. Suski; I. Gorczyca; N. E. Christensen; A. Svane; H. Lu; W. J. Schaff; E. Dimakis; A. Georgakilas; S.B. Che; Y. Ishitani; A. Yoshikawa

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)