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About this Engineering article
On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETs by Rudenko, Tamara; Yu, R.; Barraud, S.; Cherkaoui, K.; Razavi, P.; Fagas, G.; Nazarov, A.N. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Rudenko, Tamara; Yu, R.; Barraud, S.; Cherkaoui, K.; Razavi, P.; Fagas, G.; Nazarov, A.N.
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications (ISSN 1662-8958)
- Published
- 2013
- Field
- Engineering (Physical Sciences)