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About this Engineering article
Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator by Aubuchon, Kenneth G. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Aubuchon, Kenneth G.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 1971
- Language
- EN
- Field
- Engineering (Physical Sciences)