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1995 - Effect of CO and CO2 Addition To The CF4.O2 Gas System On The Etching of A Low Pressure Chemical Vapor Deposition Tengsten Film by 曾昱睿 is a document available to read on EtoBox.
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The study investigates the effects of adding CO and CO2 to a CF4/O2 gas system on the etching characteristics of low-pressure chemical vapor deposition tungsten films. The addition of CO enhances the etch rate of tungsten, while CO2 increases the concentration of O atoms, leading to improved selectivity of tungsten to SiO2. The findings indicate that small amounts of these gases can significantly enhance etching performance compared to traditional CF4/O2 systems.
- Author
- 曾昱睿
- Language
- EN