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Characterizations of bismuth telluride films from Mott‐Schottky plot and spectroscopic ellipsometry by Alexandre Zimmer; Nicolas Stein; Luc Johann; Herman Terryn; Clotilde Boulanger is a Engineering article available to read on EtoBox.

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## Abstract Capacitance measurement results (via the so‐called Mott‐Schottky plot) and Infrared spectroscopic ellipsometry (IRSE) analysis have been carried out in order to study semiconducting properties of electroplated thin films of bismuth telluride (Bi~2~Te~3~) without any electrical contact. Electrochemical impedance measurements at 10 kHz exhibited that films characterized n‐type semiconductors, depending upon potentials applied above and below the flat‐band potential. By IRSE study, the energy band gap E~g~ was found to be about 0.11 eV independent of the film composition and the electrical resistivity of about 30 μΩ.m. By combining IRSE and capacitance measurement results, dielectric constant ε and carrier concentration of the samples were calculated without any assumptions. Copyright © 2008 John Wiley & Sons, Ltd.

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Author

Alexandre Zimmer; Nicolas Stein; Luc Johann; Herman Terryn; Clotilde Boulanger

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley; Research Square (ISSN 0142-2421)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)