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About this Physics and Astronomy article
Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping by Orzali, Tommaso; Vert, Alexey; O'Brian, Brendan; Herman, Joshua L.; Vivekanand, Saikumar; Papa Rao, Satyavolu S.; Oktyabrsky, Serge R. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Orzali, Tommaso; Vert, Alexey; O'Brian, Brendan; Herman, Joshua L.; Vivekanand, Saikumar; Papa Rao, Satyavolu S.; Oktyabrsky, Serge R.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 2016
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)