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About this Engineering article
The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine by A. Watanabe; T. Kamijoh; M. Hata; T. Isu; Y. Katayama is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- A. Watanabe; T. Kamijoh; M. Hata; T. Isu; Y. Katayama
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 1990
- Language
- EN
- Field
- Engineering (Physical Sciences)
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