About this Engineering article
Fabrication of One-Transistor-Capacitor Structure of Nonvolatile TFT Ferroelectric RAM Devices Using Ba(Zr 0.1Ti 0.9)O 3 Gated Oxide Film by Yang, Cheng-Fu; Chen, Kai-Huang; Chen, Ying-Chung; Chang, Ting-Chang is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Yang, Cheng-Fu; Chen, Kai-Huang; Chen, Ying-Chung; Chang, Ting-Chang
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0885-3010)
- Published
- 2007
- Field
- Engineering (Physical Sciences)