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About this Engineering article
Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories by Yin, Ya-nan; Liu, Jie; Liu, Tian-qi; Ye, Bing; Ji, Qing-gang; Sun, You-mei; Zhou, Xin-jie is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Yin, Ya-nan; Liu, Jie; Liu, Tian-qi; Ye, Bing; Ji, Qing-gang; Sun, You-mei; Zhou, Xin-jie
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 2019
- Language
- EN
- Field
- Engineering (Physical Sciences)