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About this Engineering article
Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers by Laghumavarapu, R. B.; El-Emawy, M.; Nuntawong, N.; Moscho, A.; Lester, L. F.; Huffaker, D. L. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Laghumavarapu, R. B.; El-Emawy, M.; Nuntawong, N.; Moscho, A.; Lester, L. F.; Huffaker, D. L.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2007
- Field
- Engineering (Physical Sciences)