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About this Physics and Astronomy article
Polycrystalline p+-SixGe1-x as a Single Gate in CMOS Technology by Hellberg, P.-E.; Zhang, S.-L. is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Hellberg, P.-E.; Zhang, S.-L.
- Publisher
- Royal Swedish Academy of Sciences; IOP Publishing; Institute of Physics Publishing (ISSN 0031-8949)
- Published
- 1999
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)