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What is Double Patterning for 32nm Lithography about?

Double patterning lithography is required for 32nm half pitch nodes and beyond to overcome the limitations of single patterning. Double patterning decomposes a single mask into two masks to effectively reduce the k1 value below 0.25 and increase pitch size. This allows for higher resolution patterning. The key steps are depositing and patterning a hard mask, followed by depositing and patterning a second photoresist layer to generate thinner and doubled lines to reduce the pitch size from 45nm to 22nm. SEM

Author

Narendra Achari

Language

EN