About this scholarly article

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Effect of ALD oxidant and channel doping on positive bias stress characteristics of surface channel In0.53Ga0.47As nMOSFETs by Young, C. D.; Hill, R. J. W.; Matthews, K.; Wang, W.; Hinkle, C.; Wallace, R. M.; Loh, W.; Hobbs, C.; Kirsch, P. D.; Jammy, R. is a scholarly article available to read on EtoBox.

Author

Young, C. D.; Hill, R. J. W.; Matthews, K.; Wang, W.; Hinkle, C.; Wallace, R. M.; Loh, W.; Hobbs, C.; Kirsch, P. D.; Jammy, R.

Publisher

IEEE

Published

2013