About this scholarly article

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Gate voltage dependence of channel length modulation for InGaAs n-channel MOSFETs by Matsuda, Akihiro; Hiroki, Akira; Goto, Yuta; Nakamura, Masaaki; Yoon, JongChul is a scholarly article available to read on EtoBox.

Author

Matsuda, Akihiro; Hiroki, Akira; Goto, Yuta; Nakamura, Masaaki; Yoon, JongChul

Publisher

IEEE

Published

2014

Language

EN