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The document discusses the characteristics and performance of a one-inch cathode-ray tube with a cerium-doped YAG screen, highlighting its high luminance capabilities. It also presents research on field effects in large grain polycrystalline silicon transistors, emphasizing the impact of grain boundaries on device characteristics. The findings include a theoretical analysis of band curvature and current flow through grain boundaries in these transistors.

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pgdmnnmpzm

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EN