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About this Engineering article
High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates by Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Arulkumaran, S.; Egawa, T.; Ishikawa, H.; Jimbo, T.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)