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Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling by G. Müller; B. Birkmann is a Engineering article available to read on EtoBox.
What is Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling about?
The VGF growth of Si-doped GaAs crystals is improved considerably by optimizing the design of the crucible support and the temperature profile during the growth run. Inverse simulation with the software program CrysVUN++ was used for this procedure. The criteria for the optimized conditions are flat phase boundaries and low thermal stress during the whole growth run. The crystals which were grown according to the simulated conditions indeed showed flat phase boundaries and a very low EPD (o100 cm À2 ) within the whole crystal. It is shown that the growth conditions in the seed well and conical part of the crystal have a major influence on the dislocation density in the whole crystal.
Who reads Optimization of VGF-growth of GaAs crystals by the aid of numerical modelling?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- G. Müller; B. Birkmann
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)