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What is Silicon Nanowire Transistor Simulation about?

This paper presents a simulation study of silicon nanowire transistors (SNWT) using TCAD software, focusing on the self-consistent solution of Poisson, Schrödinger, and continuity equations. The study demonstrates that SNWTs exhibit less sensitivity to process variations compared to finFET devices and explores the implications of scaling down to the 14nm technology node. The authors emphasize the importance of advanced modeling techniques, such as the NEGF approach, for accurately predicting device behavior

Author

saimak0148

Language

EN