About this scholarly article

1981 International Electron Devices Meeting - Characterization of MoSi2-gate buried channel MOSFET's for a 256K-bit dynamic RAM by Tanaka, T.; Ishiuchi, H.; Takeuchi, Y.; Ishikawa, M.; Mochizuki, T.; Ozawa, O. is a scholarly article available to read on EtoBox.

Author

Tanaka, T.; Ishiuchi, H.; Takeuchi, Y.; Ishikawa, M.; Mochizuki, T.; Ozawa, O.

Publisher

IRE

Published

1981

Language

EN