About this scholarly article

IEEE International Electron Devices Meeting 2003 - Fully compatible integration of high density embedded DRAM with 65nm CMOS technology (CMOS5) by Matsubara, Y.; Habu, M.; Matsuda, S.; Honda, K.; Morifuji, E.; Yoshida, T.; Kokubun, K.; Yasumoto, K.; Sakurai, T.; Suzuki, T.; Yoshikawa, J.; Takahashi, E.; Hiyama, K.; Kanda, M.; Ishizuka, R.; Moriuchi, M.; Koga, H.; Fukuzaki, Y.; Sogo, Y.; Takahashi, H.; Nagashima, N.; Okamoto, Y.; Yamada, S.; Noguchi, T. is a scholarly article available to read on EtoBox.

Author

Matsubara, Y.; Habu, M.; Matsuda, S.; Honda, K.; Morifuji, E.; Yoshida, T.; Kokubun, K.; Yasumoto, K.; Sakurai, T.; Suzuki, T.; Yoshikawa, J.; Takahashi, E.; Hiyama, K.; Kanda, M.; Ishizuka, R.; Moriuchi, M.; Koga, H.; Fukuzaki, Y.; Sogo, Y.; Takahashi, H.; Nagashima, N.; Okamoto, Y.; Yamada, S.; Noguchi, T.

Publisher

IEEE

Published

2003