About this scholarly article

Modeling the effect of charges in the back side passivation layer on through silicon via (TSV) capacitance after wafer thinning by Rack, M. ;Stucchi, M. ;Sun, X. ;Neve, C. Roda ;Van der Plas, G. ;Beyne, E. ;Absil, P. ;Raskin, J.-P. is a scholarly article available to read on EtoBox.

Author

Rack, M. ;Stucchi, M. ;Sun, X. ;Neve, C. Roda ;Van der Plas, G. ;Beyne, E. ;Absil, P. ;Raskin, J.-P.

Publisher

IEEE

Published

2015

Language

EN