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High Efficiency RF Power Transistor Specs by ETIENNE ABOULAYE NDIAYE is a document available to read on EtoBox.
What is High Efficiency RF Power Transistor Specs about?
The document provides specifications for Polyfet RF devices, specifically silicon VDMOS and LDMOS transistors designed for broadband RF applications such as military radios and cellular amplifiers. It details the absolute maximum ratings, RF characteristics, and electrical characteristics of the devices, including power gain, efficiency, and capacitance values. Additionally, it includes graphical data on output power versus input power and other performance metrics.
- Author
- ETIENNE ABOULAYE NDIAYE
- Language
- EN