About this scholarly article

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy by Fu, Yi; Morkoc, Hadis; Litton, Cole W.; Fan, Q.; Chevtchenko, S.; Özgür, Ü.; Morkoç, H.; Ke, You; Devaty, Robert; Choyke, W. J.; Inoki, C. K.; Kuan, T. S. is a scholarly article available to read on EtoBox.

Author

Fu, Yi; Morkoc, Hadis; Litton, Cole W.; Fan, Q.; Chevtchenko, S.; Özgür, Ü.; Morkoç, H.; Ke, You; Devaty, Robert; Choyke, W. J.; Inoki, C. K.; Kuan, T. S.

Publisher

SPIE

Published

2007

Language

EN