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About this Engineering article
As2-ambient activation and alloyed-ohmic-contact studies of Si+-ion-implanted Al0.3Ga0.7 As/GaAs modulation-doped structures : S. D. Mukherjee, P. Zwicknagl, H. Lee, L. Rathbun and L. F. Eastman. Solid-St. Electron.29 (2), 181 (1986) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1987
- Language
- EN
- Field
- Engineering (Physical Sciences)