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Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications by A. Hamidi; G. Coquery; R. Lallemand; P. Vales; J.M. Dorkel is a Engineering article available to read on EtoBox.

What is Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications about?

To study the failure mechanisms induced on high power IGBT multichip modules by thermal cycling stress in traction environment, a good knowledge of the temperature distribution and variations on the chips and in the interfaces between the different layers of the packaging is necessary. This paper presents a methodology for contact temperature measurements on chips surface in power cycling conditions and a fast 3D thermal simulation tool for multilayered hybrid or monolithic circuits. The results of static and dynamic thermal simulation of a 1200A-3300V IGBT module are given and compared with the contact temperature measurements results. The investigation has been done within the RAPSDRA (Reliability of Advanced High Power Semiconductor Device for Traction Applications) European project.

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Author

A. Hamidi; G. Coquery; R. Lallemand; P. Vales; J.M. Dorkel

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)