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What is An X-Band To Ka-Band SPDT Switch Using 200 NM Sige HBTS: Abstract-This Paper Presents The Design and Measured about?

This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed switch was fabricated using a 200 nm, 150 GHz peak fT silicon-germanium (SiGe) BiCMOS technology. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4. Db, an isolation of more than 20. DB, and a return loss of more than 9 d

Author

عمر الهنتاتي

Language

EN